Semiconductor radiation detector element

摘要: Disclosed is a semiconductor radiation detector element of Schottky barrier type, comprising: compound crystal including cadmium and tellurium as main components; voltage application means for applying to the crystal. According present invention, said includes indium, tellurium: In x Cd y Te z formed on one surface Preferably, rate “z” occupation in range not less than 42.9%, but greater 50% by ratio number atoms. Furthermore, preferably, “y” 0%, 10%