Characteristics of Ion-Induced Bending Phenomenon
作者： Tomoya Yoshida , Masayoshi Nagao , Seigo Kanemaru
关键词:
摘要: We propose a technique of bending thin films based on the ion-induced (IIB) phenomenon that allows fabrication three-dimensional device structures and arrays, such as devices for micro-electromechanical systems (MEMSs). investigated IIB characteristics with various types under ion irradiation conditions. found important parameters were depth dose. also curvature could be controlled by normalized implantation dose ions. Microsized regions vertically standing thin-film arrays tens nanometers thick produced this technique.
harvard.edu
jsap.jp参考文章(15)
Michael Nastasi, James W. Mayer, Ion Implantation and Synthesis of Materials ,(2006)
Tomoya Yoshida, Akiyoshi Baba, Tanemasa Asano, Fabrication of gated cold cathode using standing thin film induced by ion-beam bombardment Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 24, pp. 932- 935 ,(2006) , 10.1116/1.2180262
T. Yoshida, M. Nagao, A. Baba, T. Asano, S. Kanemaru, Simple fabrication of a gated field-electron emitter with a vertical thin film formed by ion-beam irradiation Journal of Vacuum Science & Technology B. ,vol. 27, pp. 729- 734 ,(2009) , 10.1116/1.3100220
Daniel L. Flamm, Vincent M. Donnelly, John A. Mucha, The reaction of fluorine atoms with silicon Journal of Applied Physics. ,vol. 52, pp. 3633- 3639 ,(1981) , 10.1063/1.329098
Kazuyoshi Kubota, Thomas Fleischmann, Shanmugam Saravanan, Pablo O. Vaccaro, Tahito Aida, Self-assembly of micro-stage using micro-origami technique on GaAs international microprocesses and nanotechnology conference. ,vol. 42, pp. 4079- 4083 ,(2002) , 10.1143/JJAP.42.4079
Tomoya Yoshida, Masayoshi Nagao, Seigo Kanemaru, Development of Thin-Film Bending Technique Induced by Ion-Beam Irradiation Applied Physics Express. ,vol. 2, pp. 066501- ,(2009) , 10.1143/APEX.2.066501
J. K. Luo, A. J. Flewitt, S. M. Spearing, N. A. Fleck, W. I. Milne, Normally closed microgrippers using a highly stressed diamond-like carbon and Ni bimorph structure Applied Physics Letters. ,vol. 85, pp. 5748- 5750 ,(2004) , 10.1063/1.1833555
S. Aachboun, P. Ranson, Deep anisotropic etching of silicon Journal of Vacuum Science and Technology. ,vol. 17, pp. 2270- 2273 ,(1999) , 10.1116/1.581759
JTH Tsai, KBK Teo, WI Milne, None, Approach for a self-assembled thin film edge field emitter Journal of Vacuum Science & Technology B. ,vol. 20, pp. 1- 4 ,(2002) , 10.1116/1.1426368
D. Xie, Yadong Jiang, Tianling Ren, Litian Liu, A novel NO/sub 2/ gas sensor based on Bis[phthalocyaninato] samarium complex/silicon hybrid charge-flow transistor IEEE Sensors Journal. ,vol. 3, pp. 796- 800 ,(2003) , 10.1109/JSEN.2003.820363