Subthreshold events and atomic displacements in electron-irradiated cadmium

摘要: Abstract High-purity zone refined specimens of cadmium were irradiated at liquid helium temperature with electrons in the energy range 0.5–1.7 MeV. From measurements electrical resistivity change rate per incident electron and from an analysis recovery spectra up to ∼ 200 °K we deduce that two simultaneous processes are acting under bombardment. The first—a subthreshold process—is a complicated nature thought be due interaction bombarding very small amounts (∼ 10−7 atom) hydrogen atoms loosely bound traps, their binding being order Ts 10−1 eV. second is atom displacement proper, threshold Td = 19±2