Theoretical and experimental study of ASE-injection wavelength-locked Fabry-Perot laser diode
作者： Hongyun Meng , Chang-Hee Lee
DOI: 10.1117/12.802833
关键词:
摘要: The influence of bias current and ASE injection power on the side-mode suppression ratio (SMSR), relative intensity noise (RIN) gain ASE-injection wavelength-locked Fabry-Perot laser diode (F-P LD) have been studied experimentally. Results show that SMSR RIN depend for a given ASE, there is different optimum in terms RIN. With detailed spontaneous recombination mechanism its temperature dependence temperature- wavelength-dependent material gain, we propose static model F-P LD based nonlinear etalon theory. saturation analyzed theoretically with model. results increases as increase operation temperature, while it decreases reflectivity front facet.
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