Step drain and source junction formation
作者： Bin Yu
DOI:
关键词:
摘要: A method of fabricating an integrated circuit with a step source/drain junction utilizes triple amorphization technique. The technique creates shallow amorphous region, intermediate region and deep region. doped regions can be laser-annealed to form step-like junctions their extensions. process utilized for P-channel or N-channel metal-oxide-semiconductor field-effect transistors (MOSFETs).
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