GAP STATES OF CRYSTALLINE SILICON AND AMORPHOUS SiO2 SYSTEM
作者： Takayasu Sakurai , Takuo Sugano
DOI: 10.1016/B978-0-08-025969-7.50050-6
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摘要: ABSTRACT Various energy levels caused by micro-structural defects such as dangling bonds of silicon or oxygen atoms, vacancies and impurity atoms (H, OH, C1 F) at the interface between amorphous SiO2 crystalline Si substrate, in film are calculated based on Green's function formulation parametrized Hamiltonians for O. The extended Huckel theory which overlap integrals not included is used to calculate H, Cl, F.
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