Optimization of nitrogen plasma source parameters by measurements of emitted light intensity for growth of GaN by molecular beam epitaxy
作者： K. Klosek , M. Sobanska , G. Tchutchulashvili , Z.R. Zytkiewicz , H. Teisseyre
DOI: 10.1016/J.TSF.2013.02.013
关键词:
摘要: Abstract A comprehensive analysis of operating parameters Addon RF nitrogen plasma source was made in order to determine how a ratio different active species depends on the such as supplied power and flow. We show that output signal optical sensor measures intensity light emitted by is direct measure amount available for growth. Results emission spectroscopy measurements growth kinetics excited metastable molecules are mainly contributing GaN under Ga-rich conditions. procedure presented allowing find an optimal conditions cell high-quality Under these flux contains maximum minimal ionic atomic minimize lattice damage, even at high rates.
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C. R. Elsass, T. Mates, B. Heying, C. Poblenz, P. Fini, P. M. Petroff, S. P. DenBaars, J. S. Speck, Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy Applied Physics Letters. ,vol. 77, pp. 3167- 3169 ,(2000) , 10.1063/1.1325398
N. Newman, The energetics of the GaN MBE reaction: a case study of meta-stable growth Journal of Crystal Growth. ,vol. 178, pp. 102- 112 ,(1997) , 10.1016/S0022-0248(97)00083-3
A. R. Arehart, C. Poblenz, J. S. Speck, S. A. Ringel, Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy Journal of Applied Physics. ,vol. 107, pp. 054518- ,(2010) , 10.1063/1.3309778
A. J. Ptak, M. R. Millecchia, T. H. Myers, K. S. Ziemer, C. D. Stinespring, The relation of active nitrogen species to high-temperature limitations for (0001̄) GaN growth by radio-frequency-plasma-assisted molecular beam epitaxy Applied Physics Letters. ,vol. 74, pp. 3836- 3838 ,(1999) , 10.1063/1.124196
V. N. Jmerik, A. M. Mizerov, T. V. Shubina, S. B. Listoshin, S. V. Ivanov, Controlling active nitrogen flux in plasma-assisted molecular beam epitaxy of group III nitrides Technical Physics Letters. ,vol. 33, pp. 333- 336 ,(2007) , 10.1134/S1063785007040189
T. H. Myers, M. R. Millecchia, A. J. Ptak, K. S. Ziemer, C. D. Stinespring, Influence of active nitrogen species on high temperature limitations for (0001_) GaN growth by rf plasma-assisted molecular beam epitaxy Journal of Vacuum Science & Technology B. ,vol. 17, pp. 1654- 1658 ,(1999) , 10.1116/1.590805
G. Koblmüller, S. Fernández-Garrido, E. Calleja, J. S. Speck, In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN Applied Physics Letters. ,vol. 91, pp. 161904- 161904 ,(2007) , 10.1063/1.2789691
E. Iliopoulos, A. Adikimenakis, E. Dimakis, K. Tsagaraki, G. Konstantinidis, A. Georgakilas, Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth Journal of Crystal Growth. ,vol. 278, pp. 426- 430 ,(2005) , 10.1016/J.JCRYSGRO.2005.01.013
B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. Den Baars, U. Mishra, J. S. Speck, Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy Applied Physics Letters. ,vol. 77, pp. 2885- 2887 ,(2000) , 10.1063/1.1322370
C. T. Foxon, Molecular beam epitaxy growth kinetics for group III nitrides Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 14, pp. 2346- 2348 ,(1996) , 10.1116/1.588857