Characterization of neon implantation damage in silicon
作者： E. Oliviero , S. Peripolli , P.F.P. Fichtner , L. Amaral
DOI: 10.1016/J.MSEB.2004.05.014
关键词:
摘要: Abstract The damage accumulation in neon-implanted silicon, with doses ranging from 1 × 1016 to 5 1016 Ne cm−2, was explored. To avoid amorphization, samples were implanted at 250 ° C. As and annealed investigated by Rutherford backscattering spectrometry under channeling conditions (RBS/C) transmission electron microscopy (TEM) quantify characterize the lattice damage. Anneals performed 800 °C during 30 min. In as-implanted samples, a high density of small bubbles is observed all along ion distribution, forming uniform continuous layer. Clusters interstitial defects are also present deeper part layer corresponding end range ions. After annealing, cavities formed together extended characterized as {3 1 1} defects. results discussed comparison case helium implantation highlight bubble formation mechanisms.
elsevier.com
sci-hub.se 参考文章(19)
Alexandre L. Aseev, Ludmila I. Fedina, Heinz Bartsch, Clusters of Interstitial Atoms in Silicon and Germanium ,(1994)
H. Trinkaus, B. Holländer, St. Rongen, S. Mantl, H.-J. Herzog, J. Kuchenbecker, T. Hackbarth, Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures Applied Physics Letters. ,vol. 76, pp. 3552- 3554 ,(2000) , 10.1063/1.126704
M. L. David, M. F. Beaufort, J. F. Barbot, Effect of implant temperature on defects created using high fluence of helium in silicon Journal of Applied Physics. ,vol. 93, pp. 1438- 1442 ,(2003) , 10.1063/1.1531814
D.L. da Silva, P.F.P. Fichtner, M. Behar, A. Peeva, R. Koegler, W. Skorupa, Implantation temperature dependence of He bubble formation in Si Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 190, pp. 756- 760 ,(2002) , 10.1016/S0168-583X(01)01260-5
R.G. Elliman, J.S. Williams, S.T. Johnson, A.P. Pogany, Characterisation of MeV neon damage in silicon Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 15, pp. 439- 442 ,(1986) , 10.1016/0168-583X(86)90340-X
C.C. Griffioen, J.H. Evans, P.C. De Jong, A. Van Veen, Helium desorption/permeation from bubbles in silicon: A novel method of void production Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 27, pp. 417- 420 ,(1987) , 10.1016/0168-583X(87)90522-2
M. Wittmer, J. Roth, P. Revesz, J. W. Mayer, Epitaxial regrowth of Ne‐ and Kr‐implanted amorphous silicon Journal of Applied Physics. ,vol. 49, pp. 5207- 5212 ,(1978) , 10.1063/1.324416
C. A. Ferreira Lima, A. Howie, Defects in electron-irradiated germanium Philosophical Magazine. ,vol. 34, pp. 1057- 1071 ,(1976) , 10.1080/00318087608227728
Richard E. Harris, Numerical evaluation of the response of a Josephson tunnel junction in an arbitrary circuit Journal of Applied Physics. ,vol. 48, pp. 5188- 5190 ,(1977) , 10.1063/1.323599
M. Luysberg, D. Kirch, H. Trinkaus, B. Holländer, St. Lenk, S. Mantl, H.-J. Herzog, T. Hackbarth, P. F. P. Fichtner, Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates Journal of Applied Physics. ,vol. 92, pp. 4290- 4295 ,(2002) , 10.1063/1.1504496