Nvm with charge pump and method therefor

作者: Horacio P. Gasquet , Jeffrey C. Cunningham

DOI:

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摘要: A non-volatile memory device comprises an array of cells and a charge pump coupled to the cells. The is dynamically reconfigurable operate in bypass mode provide first voltage cells, program erase second that has inverse polarity voltage.

参考文章(32)
Michael C. Smayling, Luciano Talamonti, Charge pump circuit with capacitors ,(1995)
Chen-Hui Hsieh, Hau-Tai Shieh, Chung-Cheng Chou, Charge pump method and architecture ,(2006)
Toshiro Imi, Charge pump voltage converter ,(1995)
Raymond W. B. Chow, Paul S. Chan, Charge pump with symmetrical +V and -V outputs ,(1992)
Darrell D. Rinerson, Christophe J. Chevallier, Roger R. Lee, Flash memory system having fast erase operation ,(1999)
Bahram Fotouhi, Roubik Gregorian, Negative charge pump circuit ,(1997)
John Paul Lesso, John Laurence Pennock, Peter John Frith, Charge pump circuit and methods of operation thereof ,(2007)
Igor G Kouznetzov, Brad Herner, Vivek Subramanian, Mark G Johnson, Thomas H Lee, Paul M Farmwald, James M Cleeves, Christopher Petti, Andrew J Walker, Dense arrays and charge storage devices, and methods for making same ,(2001)