作者: A. Hadley , C. Notthoff , P. Mota-Santiago , N. Kirby , P. Kluth
DOI: 10.1016/J.NIMB.2019.12.006
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摘要: Abstract We present results of a systematic study the morphology etched ion tracks in amorphous SiO2 using combination small angle X-ray scattering (SAXS) and scanning electron microscopy. focus on analysis SAXS data obtained grazing incidence (GISAXS) configuration from conical channels with base radius less than 50 nm. Swift heavy irradiation 2 μm thick thermally grown layers 185 MeV Au ions was conducted at ANU Heavy Ion Accelerator Facility Canberra, Australia. Low fluences 109 per cm2 were chosen to minimize overlap structures. Irradiated samples aqueous hydrofluoric acid (HF) concentrations 5%, for etching times between 30 90 s. In configuration, we obtain good quality very cones, since beam interacts greater proportion sample low compared normal transmission mode.