Switching and breakdown in films

作者: N. Klein

DOI: 10.1016/0040-6090(71)90067-8

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摘要: Abstract A unified treatment is given for switching and breakdown events, which occur in the range of fields a few to more than 107 V/cm. The changes from an insulating conducting state, are shown consist number consecutive steps, resulting permanent material change on but not switching. main classes thermal, electronic modified thermal discussed. Observations such events thin films their interpretations treated, showing that mechanism ones semiconductor junctions understood, insulator requires clarification.

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