Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm
作者： E. Ryckeboer , A. Gassenq , M. Muneeb , N. Hattasan , S. Pathak
DOI: 10.1364/OE.21.006101
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摘要: We present a silicon-on-insulator (SOI) based spectrometer platform for wide operational wavelength range. Both planar concave grating (PCG, also known as echelle grating) and arrayed waveguide (AWG) designs are explored operation in the short-wave infrared. In addition, total of four gratings designed to cover parts range from 1510 2300 nm. These passive demultiplexers combined with GaInAsSb photodiodes. photodiodes heterogeneously integrated on SOI benzocyclobutene (DVS-BCB) an adhesive bonding layer. The uniformity photodiode characteristics high processing yield, indicate robust fabrication process. demonstrate good performance miniature spectrometers over all wavelengths which paves way on-chip absorption spectroscopy this
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