作者: R.P. Owens , J.E. Aitken , T.C. Edwards
DOI: 10.1109/TMTT.1976.1128887
关键词:
摘要: The well-defined and repeatable electrical properties of single-crystal sapphire make it an attractive substrate material for microstrip, but its dielectric anisotropy constitutes important design complication. This paper describes investigations into the quasi-static characteristics single microstrip lines on substrates cut with a specified orientation. To account anisotropy, new permittivity parameter epsilon/sub req/ is introduced, which function Iinewidth to substrate-height ratio W/h. variation W/h derived by finite-difference methods. Universal curves correctly orientated are presented, showing 1) req/, 2) low-frequency limit effective e0/, 3) characteristic impedance line Z/sub 0/, all as functions