作者: David M. Fryauf , Junce Zhang , Kate J. Norris , Juan J. Diaz Leon , Michael M. Oye
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摘要: This paper describes our finding that optical properties of semiconductor nanowires were modified by depositing a thin layer metal oxide. Indium phosphide grown organic chemical vapor deposition on silicon substrates with gold catalyst resulting in three-dimensional nanowire networks, and obtained from the collective networks. The networks coated an aluminum oxide film deposited plasma-enhanced atomic deposition. We studied dependence peak wavelength photoluminescence spectra thickness coatings. A continuous blue shift was observed when coating increased. is attributed to Burstein–Moss effect due increased carrier concentration cores caused repulsion intrinsic negative fixed charges located at inner surface. Samples further characterized scanning electron microscopy, Raman spectroscopy, transmission selective area diffractometry better understand physical mechanisms for shift. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)