Spatially resolved spin-injection probability for gallium arsenide.
作者： VP LaBella , DW Bullock , Z Ding , C Emery , A Venkatesan
DOI: 10.1126/SCIENCE.292.5521.1518
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摘要: We report a large spin-polarized current injection from ferromagnetic metal into nonferromagnetic semiconductor, at temperature of 100 Kelvin. The modification the spin-injection process by nanoscale step edge was observed. On flat gallium arsenide [GaAs(110)] terraces, efficiency 92%, whereas in 10-nanometer-wide region around [111]-oriented is reduced factor 6. Alternatively, spin-relaxation lifetime 12. This reduction associated with metallic nature edge. study advances realization using both charge and spin electron future semiconductor devices.
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