Gallium nitride-based compound semiconductor light-emitting device and method for making the same
作者： Takahiro Kozawa , Makoto Tamaki
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摘要: A light-emitting device comprises an n-type layer made of gallium nitride-based compound the formula Alx Ga1-x N, wherein 0≦X<1, and i-type formed on a semi-insulating semiconductor doped with p-type impurity for junction layer. first electrode is surface transparent conductive film second to connect through The so arranged that light emitted from side outside. When electric current supplied wire contacted thereto, held entirely at uniform potential. Light entire interface beneath can thus be picked up which optically transparent.
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