Asymmetric semiconductor memory device having electrically floating body transistor
作者： Yuniarto Widjaja
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摘要: Asymmetric, semiconductor memory cells, arrays, devices and methods are described. Among these, an asymmetric, bi-stable cell is described that includes: a floating body region configured to be charged level indicative of state the cell; first in electrical contact with region; second spaced apart from gate positioned between regions, such on side relative gate; wherein performance characteristics different side.
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