Rapid thermal synthesis of GaN nanocrystals and nanodisks
作者： Zdeněk Sofer , David Sedmidubský , Štěpán Huber , Petr Šimek , Filip Šaněk
DOI: 10.1007/S11051-012-1411-6
关键词:
摘要: Gallium nitride materials are at the forefront of nanoelectronic research due to their importance for UV optoelectronics. In this contribution, we present a facile and well-controlled synthesis GaN nanodisks by rapid thermal ammonolysis complex gallium fluoride precursor. We observed formation in 150 s 800 °C. The structural properties were investigated X-ray diffraction, Raman spectroscopy, micro-photoluminescence. morphology was scanning electron microscopy magnetic superconducting quantum interference device (SQUID) techniques. strongly influenced temperature synthesis. structure characterization shows high concentration defects related mainly vacancies N Ga. measurement SQUID paramagnetic behavior induced defects. These findings have strong implication on construction modern optoelectronic nanodevices.
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