Erbium location into AlN films as probed by spatial resolution experimental techniques

摘要: Abstract This paper presents a thorough experimental investigation of erbium-doped aluminium nitride thin films prepared by R.F. magnetron sputtering, coupling Scanning Transmission Electron Microscopy X-ray-mapping imagery, conventional and X-ray diffraction. The study is an attempt precise localisation the rare earth atoms inside in hexagonal wurtzite unit cell. shows that AlN:Er x solid solution even when reaches 6 at.%, does not lead to precipitation erbium rich phases. diffraction measurements completed simulation show main location AlN metal substitution site on whole range. They also octahedral tetrahedral sites do welcome Er ions over [1.6–6%] XRD deductions allow some interpretations theoretical mechanisms photoluminescence more specifically their concentration quenching.