Improved photovoltaic device tolerant of low resistance defects

摘要: An improved photovoltaic device (10, 10″, 10‴) exhibiting increased tolerance of low resistance defects includes a substrate (14) having semiconductor body (12) disposed on it, bus grid current collecting structure (22) upon the and transparent conductive electrode (32) overlying at least portion the semiconduc­ tor body. A layer relatively high resistivity material (29, 29′, 29″) is within to restrict from flowing directly between substrate structure through defect path. The high may be body beneath electrode or and in contact with In former case, interposed disposed top structure. Preferably, formed into pattern corresponding to registration it.