Initial growth process and surface structure of Ag on Si(111) studied by low-energy Ion-Scattering Spectroscopy (ISS) and LEED-AES

摘要: Abstract The growth process of silver on a Si(111) substrate has been studied in detail by low-energy ion-scattering spectroscopy (ISS) combined with LEED-AES. Neon ions 500 eV were used as probe ISS. ISS experiments have revealed that the at room temperature and high are quite different from each other even submonolayer coverage range. following models proposed for respective temperatures. At temperature, deposited Ag forms two-dimensional (2D) island around 2/3 monolayer (ML) coverage, where atoms packed commensurately Si(111)1 substrate. One third Si surface remains uncovered there. Then it starts to develop into crystal, few ML 3D bulk crystal grows directly An intermediate layer, which covers uniformly whole before does not exist. temperatures (>~200°C), well-known (111)√3- layer is formed an consists uniformly. These embedded first double It concluded formation √3 structure needs relatively activation energy may originate large displacement owing embedment atoms, proceed below about 200°C. most stable state outermost shape island, both surface.