Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering
作者： Stefan Facsko , Thomas Dekorsy , Clemens Koerdt , Cyril Trappe , Heinrich Kurz
DOI: 10.1126/SCIENCE.285.5433.1551
关键词:
摘要: A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline 35 nanometers in diameter and arranged regular hexagonal lattice were produced gallium antimonide surfaces. The mechanism relies natural self-organization that occurs during the erosion of surfaces, which interplay between roughening smoothing due to diffusion.
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