Modeling the degradation/recovery of short-circuit current density in perovskite and thin film photovoltaics

摘要: Abstract A time-dependent approach has been developed for modeling the degradation and recovery rate of short-circuit current density in thin film perovskite solar cells. set six different equations derived by fundamentally relating carrier collection efficiency to defect/trap creation/annihilation kinetics. The distribution concentration defects or traps across absorber layer a cell vary under aging conditions. As result, changes due distorted diffusion length depletion width at junction. These parameters are both related densities reverse square 1/ N ( t ) . We applied our on experimental data reported literature degradation/recovery CdTe, CIGS, CZTS cells with various architectures prepared through fabrication details. devices were aged elevated temperature, prolonged irradiation moisture. effect was taken as change shallow/deep defect trap mid-gap. good fit obtained setting fitting reasonable range. include initial density, 0 , time constant, τ typical increment profile given = (1 + t/t0)1/2θ. It shown that opposite conventionally believed, variation may significantly even if layer's thickness is kept constant. This occasionally observed techniques using stress