Thermal Change of Unstable Stacking Faults in β-SiC

摘要: The thermal change of unstable stacking faults (USFs) in ultrafine and highly pure β-SiC powder synthesized by the plasma chemical vapor deposition (plasma-CVD) method was studied high-resolution transmission electron microscopy (HR-TEM). number USFs, which were frequently observed as-synthesized powder, decreased at elevated temperatures an Ar atmosphere. In contrast, general (GSFs) increased with decreasing USFs. Moreover, a type fault that geometrically more than USF specimen after heat treatment. present study, annihilation process USFs before treatment is discussed.