Microstructure and metal–insulator transition of NdNiO3 thin films on various substrates
作者： P. Laffez , M. Zaghrioui , I. Monot , T. Brousse , P. Lacorre
DOI: 10.1016/S0040-6090(99)00557-X
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摘要: Abstract We succeeded in preparing single phase NdNiO3 thin films with a thermally driven metal–insulator transition by RF sputtering and subsequent annealing under oxygen pressure. The were strongly oriented their electrical properties have been studied between 80 300 K. influence of the substrate on transport was studied. exhibit around 160 K when bulk shows 200 K.
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