Dislocations in Silicon Carbide

摘要: The dislocation structure of type 6H hexagonal silicon carbide has been studied by etching combined with optical microscopy and x‐ray diffraction microscopy. validity the conventional technique for identification sites intersection dislocations (0001) surfaces established. However, high densities lying in planes hence heretofore undetected techniques were often observed Dislocations [1120] vectors have now found evidence slip both on basal a ``puckered'' pyramidal plane. Pileups formed walls climb also observed. Silicon shows many characteristics more plastically deformable materials.