Deposition and characterization of ZrO 2 thin films on silicon substrate by MOCVD

摘要: ZrO2 thin films were deposited at 1 atm on Si substrates by oxidation-assisted thermal decomposition of zirconium-trifluoroacetylacetonate in the temperature range 300–615 °C. Above a deposition 400 °C, have columnar grain structure, where each is perpendicular to substrate surface with c-axis preferred crystallographic orientation, and poor electrical characteristics as dielectric film. But film 350 °C has fine equiaxed microcrystalline structure superior breakdown field MV/cm relative constant 27.