Nano pyramid array on Si by concurrent growth of parallel and perpendicular spatial wave and local angle-dependent sputtering

摘要: Abstract I report simultaneous growth of the Si nano-structures with wave vectors parallel and perpendicular to projection obliquely bombarding O2+ ions. At initial stage growth, finite length long nano-patterns are observed. Following linear model ion induced nanopatterning, fast amplitude developed structures as a function fluence is However, for further bombardment, change local incidence angle leads slope dependent nonlinear effects. very high when comparable wavelength structures, angle-dependent sputtering shadowing effect transforms sinusoidal ripple triangular terraced structure. For correlation along beam direction increases faster than direction, which results in rotation nano-pattern formation nano-pyramidal array While continuum Kuramoto-Sivashinsky equation predicts disordered structure at such fluence, we find pyramidal ordered by oxygen bombardment. Such could be used template mask resistless large area nano-dot lithography.