High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interface

摘要: Recent studies have shown that high quality GaAs films can be grown by molecular beam epitaxy on Si substrates whose surfaces are slightly tilted from the (100) plane. In order to investigate effect of tilting substrate formation defects, atomic structure in GaAs/Si epitaxial interface has been studied with a 1‐MV ultrahigh vacuum, voltage electron microscope. Two types misfit dislocations, one Burgers vectors parallel and other inclined 45°, were found interface. The observation two cross‐sectional samples perpendicular each surface directly influences these dislocations. A possible mechanism reduction threading dislocations is discussed based observations.