作者: A. El-Denglawey , M.M. Makhlouf , M. Dongol
DOI: 10.1016/J.RINP.2018.07.023
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摘要: Abstract Quartz was used as a substrate to hold different film thicknesses of Ge0.15Te0.78Cu0.07 within range 100–500 nm prepared by thermal evaporation technique. Films are still amorphous up 200 nm and turn more ordered nano polycrystalline one ascending the values thickness 500 nm. crystalline phase due annealing. The relation resistance temperature shows transformation. Optical constants; refractive index, n absorption coefficient, α single-oscillator energy, Eo dispersion Ed lattice dielectric constant, eL infinite wavelength e∞ ratio carrier concentration effective mass, N/m∗ optical conductivity, σ energy loss function, ELF show decreasing with followed 200–500 nm. It is concluded that 100–200 nm introduces disordered films while 200–500 nm one.