Electrical Characterization of GaAs Materials and Devices

摘要: Part 1 The hall effect and magnetoresistance: practical considerations conductivity coefficient scattering theory - mobility semiconductor statistics carrier concentration. 2 Magnetoresistance in ungated structures contact resistance patterns gunn diodes: one-layer TLM magneto-TLM analysis two-layer diodes, geometry corrections. 3 Capacitance magnetoresistance gated field-effect transistors: capacitance concentration profiling MESFETs conductance gate current parasitic-resistance effects MODETs. 4 from deep traps: steady-state transient behaviour emission capture temperature spectrosocpy DLTS optical excitation PICTS HETS. Appendices: solutions to differential equations multi-band conduction commercial instruments.