Electrical and Structural Properties of GAZO Films Deposited by DC Magnetron Co-sputtering System with Two Cathodes
作者： Luo Jie , Se-Hun Park , Pung-Keun Song
DOI: 10.5695/JKISE.2009.42.3.122
关键词:
摘要: Ga/Al doped ZnO (GAZO) thin films were prepared on non-alkali glass substrate by co-sputtering system using two DC cathodes equipped with AZO (:2.0 wt%) target and GZO (:6.65 target. This study examined the influence of Al/Ga concentration temperature electrical, structural optical properties GAZO films. The lowest resistivity was obtained at room temperature. With increasing temperature, film decreased to a minimum value below . Furthermore, when 0.05% gas introduced, All had preferred orientation along (002) direction, indicating that deposited have hexagonal wurtzite structure formed textured growth c-axis. average transmittance more than 85% in visible light range.
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