Low-noise photon counting with a radio-frequency quantum-dot field-effect transistor
作者： B. E. Kardynał , A. J. Shields , N. S. Beattie , I. Farrer , K. Cooper
DOI: 10.1063/1.1639936
关键词:
摘要: We present photon counting experiments with a single-photon detector based on field-effect transistor gated by layer of InAs quantum dots. A cryogenic radio-frequency amplifier is used to convert the photon-induced steps in source-drain current into voltage peaks. measure maximum detection efficiency 0.14%, corresponding internal 10%. The dark count rate less than 10−8 ns−1 when 0.045%.
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