Properties of anatase CoxTi1-xO2 thin films epitaxially grown by reactive sputtering
作者： B.-S. Jeong , Y.W. Heo , D.P. Norton , A.F. Hebard , J.D. Budai
DOI: 10.1016/J.TSF.2005.04.113
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摘要: Epitaxial CoxTi1xO2 anatase thin films were grown on (001)LaAlO3 by a reactive RF magnetron co-sputter deposition with water vapor serving as the oxidant. The use of oxygen source proves useful in growing oxygen-deficient, semiconducting sputter deposition, undoped and Co-doped TiO2 showing n-type semiconductor behavior, carrier concentrations 10 17 –10 18 cm 3 . Magnetization measurements (x=0.07) reveal ferromagnetic behavior M-H loop at room temperature saturation magnetization order 0.7 Bohr magnetons/Co. X-ray photoemission spectrometry indicates that Co cations are 2+ valence state. However, chemical analysis surface structure significant fraction cobalt segregates into Co–Ti–O phase. This suggests moments may reside oxygen-bound is segregated from majority D 2005 Elsevier B.V. All rights reserved.
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