The influence of growth temperature on CVD grown graphene on SiC
作者： Andréa Nicollet
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摘要: Graphene is one of the most popular material due to its promising properties, for instance electronics applications. films were grown on silicon carbide (SiC) substrate using chemical vapor deposition (CVD). Influence temperature morphology was investigated. Characterizations done by reflectance mapping, atomic force microscopy and Raman spectroscopy. Two samples sublimation process, compare number layers graphene with deposition.The mapping showed that made CVD notinfluenced temperature. But also, demonstrated growth present in allthe presence coating susceptor. The probably started then deposition. step characteristic surface conserved during graphene. bunching, a decrease inthe height occurred width terraces increased. decreasing leads smoother method. spectroscopy confirmed ofgraphene buffer layer growth. Moreover, it compressive strain layers.
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