Preparation, Structural Determination, and Characterization of Electronic Properties of Bis-silylated and Bis-germylated Lu3N@Ih-C80

摘要: Bis-silylated and bis-germylated derivatives of Lu3 N@Ih -C80 (3, 4, 5) were successfully synthesized by the photochemical addition disiliranes 1 a, 1 b or digermirane 2, fully characterized spectroscopic, electrochemical, theoretical studies. Interestingly, 2 reacts more efficiently than 1 a because its good electron-donor properties lower steric hindrance around Ge-Ge bond. The 1,4-adduct structures 3, 5 unequivocally established single-crystal X-ray crystallographic analyses. electrochemical studies reveal that energy gaps between highest occupied molecular orbital (HOMO) lowest unoccupied (LUMO) 1,4-adducts are remarkably smaller those , electron-donating groups effectively raise HOMO levels. It is also observed germyl slightly silyl on basis redox HOMO-LUMO energies 4 5. Bis-silylation bis-germylation effective versatile methods for tuning electronic characteristics endohedral metallofullerenes.