作者: Khairul Aimi Yusof , Rohanieza Abdul Rahman , Muhammad AlHadi Zulkefle , Sukreen Hana Herman , Wan Fazlida Hanim Abdullah
DOI: 10.11113/JT.V78.8748
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摘要: Titanium dioxide (TiO 2 ) thin films were fabricated on indium tin oxide (ITO) glass substrates using the spin coating technique and further implemented as sensing membranes of extended gate field effect transistor (EGFET) based pH sensor. The as-deposited annealed at different temperatures from 200 - 600 °C in room ambient for 20 min. effects annealing electrical crystalline properties analyzed by I-V two point probes measurement X-ray diffraction respectively. Meanwhile, surface morphology was observed emission scanning electron microscope (FESEM). We then measured transfer characteristics ( I D -V G TiO /ITO membrane a semiconductor parametric device analyzer sensor characterization. It found that, 300 achieved higher sensitivity good linearity 51.48 mV/pH 0.99415, respectively buffer solutions 4, 7, 10, 12. Thin film gives conductivity 384.62 S/m. that proportional with membrane.