Optimal device structure for Pipe-shaped BiCS Flash memory for ultra high density storage device with excellent performance and reliability
作者： Megumi Ishiduki , Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kito , Masaru Kido
DOI: 10.1109/IEDM.2009.5424261
关键词:
摘要: An asymmetric source/drain profile for select gate and metal salicided control are successfully realized on Pipe-shaped Bit Cost Scalable (P-BiCS) Flash memory to achieve data storage device with excellent performance reliability.
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