Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
作者： Martijn F. J. Vos , Bart Macco , Nick F. W. Thissen , Ageeth A. Bol , W. M. M. (Erwin) Kessels
DOI: 10.1116/1.4930161
关键词:
摘要: Molybdenum oxide (MoOx) films have been deposited by atomic layer deposition using bis(tert-butylimido)-bis(dimethylamido)molybdenum and oxygen plasma, within a temperature range of 50–350 °C. Amorphous film growth was observed between 50 200 °C at per cycle (GPC) around 0.80 A. For temperatures 250 °C higher, transition to polycrystalline observed, accompanied an increase in GPC up 1.88 A. all the O/Mo ratio found be just below three, indicating were slightly substoichiometric with respect MoO3 contained vacancies. The high purity demonstrated absence detectable C N contamination Rutherford backscattering measurements, H content varying 3 11 at. % measured elastic recoil detection. In addition chemical composition, optical properties are reported as well.
scitation.org
tue.nl
core.ac.uk
harvard.edu
osti.gov
aip.org参考文章(38)
Harm C. M. Knoops, K. de Peuter, W. M. M. Kessels, Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time Applied Physics Letters. ,vol. 107, pp. 014102- ,(2015) , 10.1063/1.4926366
H Ohtsuka, Characteristics of Li/MoO3-x thin film batteries Solid State Ionics. ,vol. 144, pp. 59- 64 ,(2001) , 10.1016/S0167-2738(01)00889-X
B. Macco, M. F. J. Vos, N. F. W. Thissen, A. A. Bol, W. M. M. Kessels, Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells Physica Status Solidi-rapid Research Letters. ,vol. 9, pp. 393- 396 ,(2015) , 10.1002/PSSR.201510117
S.H. Mohamed, S. Venkataraj, Thermal stability of amorphous molybdenum trioxide films prepared at different oxygen partial pressures by reactive DC magnetron sputtering Vacuum. ,vol. 81, pp. 636- 643 ,(2007) , 10.1016/J.VACUUM.2006.08.006
K.A. Gesheva, A. Cziraki, T. Ivanova, A. Szekeres, Crystallization of chemically vapor deposited molybdenum and mixed tungsten/molybdenum oxide films for electrochromic application Thin Solid Films. ,vol. 515, pp. 4609- 4613 ,(2007) , 10.1016/J.TSF.2006.11.042
F Werfel, E Minni, Photoemission study of the electronic structure of Mo and Mo oxides Journal of Physics C: Solid State Physics. ,vol. 16, pp. 6091- 6100 ,(1983) , 10.1088/0022-3719/16/31/022
James Bullock, Andres Cuevas, Thomas Allen, Corsin Battaglia, Molybdenum oxide MoOx: A versatile hole contact for silicon solar cells Applied Physics Letters. ,vol. 105, pp. 232109- ,(2014) , 10.1063/1.4903467
Yixin Zhao, Alexandre M. Nardes, Kai Zhu, Effective hole extraction using MoOx-Al contact in perovskite CH3NH3PbI3 solar cells Applied Physics Letters. ,vol. 104, pp. 213906- ,(2014) , 10.1063/1.4880899
E Haro-Poniatowski, M Jouanne, J.F Morhange, C Julien, R Diamant, M Fernández-Guasti, G.A Fuentes, J.C Alonso, Micro-Raman characterization of WO3 and MoO3 thin films obtained by pulsed laser irradiation Applied Surface Science. ,vol. 127, pp. 674- 678 ,(1998) , 10.1016/S0169-4332(97)00724-1
Corsin Battaglia, Silvia Martín de Nicolás, Stefaan De Wolf, Xingtian Yin, Maxwell Zheng, Christophe Ballif, Ali Javey, Silicon heterojunction solar cell with passivated hole selective MoOx contact Applied Physics Letters. ,vol. 104, pp. 113902- ,(2014) , 10.1063/1.4868880