High-Performance Metal-Insulator-Metal Capacitors Using Amorphous BaTi4O9 Thin Film
作者： Y. H. Jeong , J. B. Lim , S. Nahm , H.-J. Sun , H. J. Lee
DOI: 10.1149/1.2400606
关键词:
摘要: Amorphous, 70 nm thick BaTi 4 O 9 film grown at 350°C exhibited a high capacitance density of 4.58 fF/μm 2 100 kHz, which decreased slightly to 3.7 6.0 GHz. It had relatively Q factor 80 3 The leakage current the was ∼ 1.07 nA/cm 1 V and mechanism considered be Schottky emission. quadratic linear voltage coefficients were -65.4 -44.0 ppm/V respectively. temperature coefficient also low about 126.6 ppm/°C kHz. These results confirm that amorphous can used as performance metal-insulator-metal capacitor.
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