Low-temperature epitaxial growth of AlN films on sapphire by electron cyclotron resonance plasma-assisted chemical vapor deposition
作者： Wei Zhang , Yoshihiro Someno , Makoto Sasaki , Toshio Hirai
DOI: 10.1016/0022-0248(93)90867-V
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摘要: Abstract AlN films have been epitaxially grown onto (0001) sapphire substrates, for the first time, by electron cyclotron resonance plasma-assisted chemical vapor deposition using an AlBr 3 H 2 N gas mixture at substrate temperature as low 650°C. This method of film growth was shown to lead good epitaxial with a very smooth surface morphology. X-ray diffraction analysis showed that c -plane parallel sapphire. pole-figure [1210] direction is [1010] The further verified reflection high energy diffraction.
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