Growth of highly doped p‐type ZnTe films by pulsed laser ablation in molecular nitrogen

摘要: Highly N‐doped (mid‐1019 to ≳1020 cm−3) ZnTe/(001)GaAs epitaxial films have been grown by pulsed laser ablation (PLA) of a stoichiometric ZnTe target in high‐purity N2 ambient (50 200 mTorr) without the use any assisting dc or ac plasma source. Unlike recent experiments which atomic N, extracted from and rf sources, was used produce N‐doping during molecular beam epitaxy, spectroscopic measurements performed PLA do not reveal presence N. This suggests that high hole concentrations ablated are produced new mechanism, possibly energetic beam‐induced reactions with excited adsorbed on film surface, and/or transient formation Zn–N complexes plume.