Fermi threshold field effect transistor including doping gradient regions

摘要: A high saturation current, low leakage, Fermi threshold field effect transistor includes a predetermined minimum doping concentration of the source and drain facing channel to maximize current transistor. Source gradient regions between source/drain channel, respectively, thickness greater than 300Å are also provided. The voltage Fermi-FET may be lowered from twice potential substrate, while still maintaining zero static electric in perpendicular by increasing that which produces potential. By depth, preferably about 600Å, independently varied excess carrier respectively. having gate insulator less 120Å, length 1 μm can thereby provide P-channel at least 4 amperes per centimeter width an N-channel 7 width, with leakage 10 picoamperes micron using power supplies 0 5 volts.