Molecular Beam Epitaxy And Selective MBE Deposition of GaAs Device Structures
作者： A. Christou
DOI: 10.1007/978-94-009-4422-0_19
关键词:
摘要: Molecular Beam Epitaxy (MBE) is an ultrahigh vacuum technique for preparing thin epitaxial layers of II–VI1,2 III–V3–5 and IV–VI6,7 semiconductors. The growth process consisting incident molecular beams provides a high degree control over layer doping, composition, uniformity thickness. Such not achievable with liquid phase epitaxy (LPE) or chemical vapor Deposition (CVD) techniques.
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