Diffusion and interdiffusion in Zn-disordered AlAs-GaAs superlattices
作者： J. W. Lee , W. D. Laidig
DOI: 10.1007/BF02659841
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摘要: Several superlattices (SL's) with different layer thicknesses, grown by molecular beam epitaxy (MBE), were disordered via low temperature (550−600°C) Zn diffusions to investigate thickness effects on both the diffusion process and Al-Ga interdiffusion process. The coefficients measured using secondary ion mass spectroscopy (SIMS) Auger electron (AES) found be ˜10−12 cm2/sec, increasing somewhat decreasing thickness. activation energy for ranged from 3.1 eV an 1100A/period SL 2.1 a 320A/period SL. coefficient associated calculated AES depth profiles. is order of 10−16 cm2/sec approximately 1 eV, independent
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