Comparison among Silicon modulators based on Free-Carrier Plasma Dispersion Effect
作者： Diego Perez-Galacho , Delphine Marris-Morini , Eric Cassan , Charles Baudot , Jean-Marc Fedeli
DOI: 10.1109/ICTON.2015.7193697
关键词:
摘要: In this work, a deep understanding on performance compromises in the design of Silicon phase modulators is presented. Simplified modelling presented and validated against full simulation. It thus used to provide an analysis depletion injection based modulators. Furthermore, experimental demonstration 40 Gbit/s reported 200 mm 300 SOI technology.
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