10 μm infrared hot‐electron transistors
作者： K. K. Choi , M. Dutta , P. G. Newman , M.‐L. Saunders , G. J. Iafrate
DOI: 10.1063/1.103480
关键词:
摘要: A new hot‐electron transistor for 10 μm infrared radiation detection is presented and discussed. The device utilizes an sensitive GaAs/AlGaAs multiple quantum well structure as emitter, a wide base, thick barrier placed in front of the collector electron energy high pass filter. filter selectively permits higher photocurrent to collector; lower dark current rejected by filter, drained through base. detectivity, noted measurements, much enhanced comparison with companion photoconductive devices.
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