Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation
作者： H. Xie , R. Prioli , A. M. Fischer , F. A. Ponce , R. M. S. Kawabata
DOI: 10.1063/1.4958871
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摘要: The properties of InAs quantum dots (QDs) have been studied for application in intermediate band solar cells. It is found that suppression plastic relaxation the QDs has a significant effect on optoelectronic properties. Partial capping plus annealing shown to be effective controlling height and suppressing relaxation. A force balancing model used explain relationship between QD height. strong luminescence observed from strained QDs, indicating presence localized states desired energy range. No plastically relaxed QDs.
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