Dielectric and anelastic relaxation of crystals containing point defects. II

摘要: Abstract A theory is developed which describes the linear, reversible, time-dependent response of a crystal containing point defects to stress or electric fields, respectively known as anelastic and dielectric relaxation. Such relaxation occurs because redistribution among sites are initially equivalent, but becomes inequivalent in presence external field. The macroscopic behaviour such found be describable terms symmetry can assigned defect. This defect determines whether not will undergo and, if occur, specific coefficients elastic compliance susceptibility show effect. latter information, called ‘selection rules’ tells, effect, combination field components capable redistributing defects. Tables given for these selection rules all possible symm...