摘要: Area-efficient 4/spl times/ charge pumps based on the cross-coupled structure that uses V/sub dd/-2V/sub dd/ outputs alternately to reduce number of power devices and capacitors are presented. Compared with conventional designs, our best design can save two transistors, one capacitor, level shift circuits. An integrated pump is then designed deliver 100 /spl mu/A at 9 V using a 0.8-/spl mu/m AMS high-voltage CMOS process. The topology be extended 2n/spl pumps, 6/spl also fabricated tested demonstrate validity extension.